The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Nov. 21, 2018
Applicant:

Sap SE, Walldorf, DE;

Inventors:

Carsten Thiel, Heidelberg, DE;

Guenter Radestock, Karlsruhe, DE;

Martin Richtarsky, Nussloch, DE;

Bernhard Scheirle, Walldorf, DE;

Assignee:

SAP SE, Walldorf, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/10 (2016.01); G06F 12/02 (2006.01); G06F 16/22 (2019.01); G06F 12/06 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 12/10 (2013.01); G06F 3/064 (2013.01); G06F 3/067 (2013.01); G06F 3/0607 (2013.01); G06F 3/0631 (2013.01); G06F 12/0223 (2013.01); G06F 12/0246 (2013.01); G06F 12/0646 (2013.01); G06F 16/221 (2019.01); G06F 2212/1008 (2013.01); G06F 2212/163 (2013.01); G06F 2212/205 (2013.01); G06F 2212/657 (2013.01); G06F 2212/7202 (2013.01);
Abstract

A system includes storage, in a volatile random access memory, of a first data block comprising an array of distinct values of a database table column, and first header data comprising a first pointer to the first data block, determination of a memory size associated with the first header data and the first data block, allocation of a first memory block of the non-volatile random access memory based on the determined memory size, determination of an address of the non-volatile random access memory associated with the allocated first memory block, and writing of an indicator of the number of distinct values of the array and a binary copy of the first data block at the address of the non-volatile random access memory.


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