The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2020

Filed:

Apr. 04, 2018
Applicant:

Aisin Seiki Kabushiki Kaisha, Kariya-shi, JP;

Inventors:

Tomoya Tagami, Nagoya, JP;

Gang Xie, Anjo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/14 (2006.01); B32B 9/00 (2006.01); B32B 15/04 (2006.01); B32B 15/01 (2006.01); C01B 32/168 (2017.01); C01B 32/162 (2017.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B32B 9/007 (2013.01); B32B 15/015 (2013.01); B32B 15/04 (2013.01); C01B 32/162 (2017.08); C01B 32/168 (2017.08); B32B 2250/05 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); Y10T 428/12458 (2015.01); Y10T 428/12535 (2015.01);
Abstract

A method of manufacturing a carbon nanotube composite includes: a laminate forming step of forming, on a conductive base material made of a first metal having conductivity, a buffer layer made of a second metal capable of mutual diffusion with the first metal, and forming, on the buffer layer, a catalyst layer made of seed catalyst particles which catalyze formation of carbon nanotubes; a buffer layer diffusion step of performing heat treatment on the laminate; and a carbon nanotube layer forming step of forming the carbon nanotubes on the catalyst layer of the laminate by a chemical vapor deposition method, wherein the heat treatment is performed so as to form a solid phase diffusion region where the first metal and the second metal are solid-phase diffused from a surface of the conductive base material to a predetermined depth selected from depths of 850 nm or more.


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