The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Mar. 13, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Takuya Haga, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/45 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01); G11C 11/56 (2006.01); G06F 11/10 (2006.01); H03M 13/11 (2006.01); H03M 13/00 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 16/16 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
H03M 13/458 (2013.01); G06F 11/1012 (2013.01); G06F 11/1068 (2013.01); G11C 11/5642 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 29/52 (2013.01); H03M 13/1111 (2013.01); H03M 13/45 (2013.01); H03M 13/6325 (2013.01); G11C 16/16 (2013.01); G11C 2029/0411 (2013.01);
Abstract

A memory system includes a nonvolatile semiconductor memory and a controller. The controller is configured to maintain a plurality of log likelihood ratio (LLR) tables for predicting a value of data read from the nonvolatile semiconductor memory, count a number of times that each of write operations, erase operations, and read operations have been carried out with respect to each unit storage region of the nonvolatile semiconductor memory, determine an order in which the LLR tables are referred to, based on the counted number of the read operations and one of the counted number of the write operations and the counted number of the erase operations, which correspond to a target unit storage region of a read operation, and carry out decoding of data read from the target unit storage region of the read operation, using one of the LLR tables selected according to the determined order.


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