The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Jun. 06, 2017
Applicant:

Taiyo Yuden Co., Ltd., Tokyo, JP;

Inventors:

Kentaro Nakamura, Tokyo, JP;

Fumiya Matsukura, Tokyo, JP;

Naoki Takahashi, Tokyo, JP;

Takashi Matsuda, Tokyo, JP;

Tsutomu Miyashita, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/08 (2006.01); H01L 41/29 (2013.01); H03H 9/00 (2006.01); G01L 1/16 (2006.01); H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 3/007 (2006.01); G01L 9/00 (2006.01); H01L 41/08 (2006.01); H03H 9/145 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H03H 3/08 (2013.01); G01L 1/165 (2013.01); G01L 9/0025 (2013.01); H01L 41/08 (2013.01); H01L 41/29 (2013.01); H03H 3/0072 (2013.01); H03H 3/02 (2013.01); H03H 9/02543 (2013.01); H03H 9/02834 (2013.01); H03H 9/02842 (2013.01); H03H 9/145 (2013.01); H01L 27/10852 (2013.01); H03H 2003/023 (2013.01); H03H 2003/025 (2013.01); H03H 2003/027 (2013.01); Y10T 29/42 (2015.01); Y10T 29/49005 (2015.01);
Abstract

An acoustic wave device fabrication method includes: forming on a piezoelectric substrate a comb-shaped electrode and a wiring layer coupled to the comb-shaped electrode; forming on the piezoelectric substrate a first dielectric film having a film thickness greater than those of the comb-shaped electrode and the wiring layer, covering the comb-shaped electrode and the wiring layer, and being made of silicon oxide doped with an element or undoped silicon oxide; forming on the first dielectric film a second dielectric film having an aperture above the wiring layer; removing the first dielectric film exposed by the aperture of the second dielectric film by wet etching using an etching liquid causing an etching rate of the second dielectric film to be less than that of the first dielectric film so that the first dielectric film is left so as to cover an end face of the wiring layer and the comb-shaped electrode.


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