The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Apr. 14, 2017
Applicant:

Pacific Light Technologies Corp., Portland, OR (US);

Inventors:

Juanita N. Kurtin, Hillsboro, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); C09K 11/02 (2006.01); C01B 19/00 (2006.01); B01J 13/08 (2006.01); C09K 11/88 (2006.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); B01J 13/08 (2013.01); C01B 19/007 (2013.01); C09K 11/025 (2013.01); C09K 11/883 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/60 (2013.01); C01P 2002/84 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); H01L 33/501 (2013.01); Y10S 977/774 (2013.01); Y10S 977/824 (2013.01); Y10S 977/892 (2013.01); Y10S 977/896 (2013.01); Y10S 977/95 (2013.01);
Abstract

Semiconductor structures having insulators coatings and methods of fabricating semiconductor structures having insulators coatings are described. In an example, a method of coating a semiconductor structure involves adding a silicon-containing silica precursor species to a solution of nanocrystals. The method also involves, subsequently, forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species. The method also involves adding additional amounts of the silicon-containing silica precursor species after initial forming of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.


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