The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Jan. 17, 2020
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Seong Kyu Jang, Ansan-si, KR;

Hong Suk Cho, Ansan-si, KR;

Kyu Ho Lee, Ansan-si, KR;

Chi Hyun In, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/02 (2010.01); H01L 33/46 (2010.01); H01L 23/00 (2006.01); H01L 33/48 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 24/81 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/48 (2013.01); H01L 33/62 (2013.01); H01L 33/405 (2013.01); H01L 2924/12041 (2013.01);
Abstract

A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.


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