The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Jul. 13, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Keith E. Fogel, Hopewell Junction, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 31/078 (2012.01); H01L 31/0725 (2012.01); H01L 31/0352 (2006.01); H01L 31/0745 (2012.01); H01L 31/076 (2012.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/078 (2013.01); H01L 31/035227 (2013.01); H01L 31/035281 (2013.01); H01L 31/076 (2013.01); H01L 31/0725 (2013.01); H01L 31/0745 (2013.01); H01L 31/1824 (2013.01); H01L 31/1884 (2013.01); H01L 31/20 (2013.01); Y02E 10/548 (2013.01);
Abstract

A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.


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