The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Jul. 12, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Solomon Assefa, Ossining, NY (US);
Bruce W. Porth, Jericho, VT (US);
Steven M. Shank, Jericho, VT (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); G02B 6/42 (2006.01); H01L 31/09 (2006.01); G06F 30/30 (2020.01); G02B 6/122 (2006.01); G02B 6/136 (2006.01); H01L 31/0203 (2014.01); H01L 29/06 (2006.01); H01L 31/0304 (2006.01); G02B 6/12 (2006.01); H01L 31/0352 (2006.01); H01L 31/20 (2006.01); G02B 6/13 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); G02B 6/12004 (2013.01); G02B 6/1228 (2013.01); G02B 6/13 (2013.01); G02B 6/136 (2013.01); G02B 6/42 (2013.01); G02B 6/4203 (2013.01); G02B 6/4295 (2013.01); G06F 30/30 (2020.01); H01L 29/0649 (2013.01); H01L 31/0203 (2013.01); H01L 31/028 (2013.01); H01L 31/0304 (2013.01); H01L 31/035281 (2013.01); H01L 31/09 (2013.01); H01L 31/182 (2013.01); H01L 31/184 (2013.01); H01L 31/1804 (2013.01); H01L 31/1808 (2013.01); H01L 31/1864 (2013.01); H01L 31/1872 (2013.01); H01L 31/208 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure.