The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
May. 09, 2019
Purdue Research Foundation, West Lafayette, IN (US);
Tillmann C. Kubis, West Lafayette, IN (US);
Prasad Sarangapani, Mountain View, CA (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.