The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Dec. 21, 2018
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Shunsuke Katoh, Ishikawa, JP;

Yusuke Kawaguchi, Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.


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