The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Mar. 04, 2016
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventors:
Ji Pan, San Jose, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Assignee:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 29/0865 (2013.01); H01L 29/0878 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66128 (2013.01); H01L 29/66143 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7804 (2013.01); H01L 29/7808 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01); H01L 21/26586 (2013.01); H01L 29/41766 (2013.01); H01L 29/47 (2013.01);
Abstract
Fabricating a semiconductor device comprises: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; disposing an implant at least along a contact trench wall; and disposing an epitaxial enhancement portion below the contact trench and in contact with the implant.