The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Apr. 24, 2019
Denso Corporation, Kariya, Aichi-pref., JP;
DENSO CORPORATION, Kariya, JP;
Abstract
In a semiconductor device, a boundary area is between an IGBT region and a diode region. In other words, the boundary region is at a position adjacent to the diode region. The boundary region has a lower ratio of formation of a high-concentration P-type layer than the IGBT region. Accordingly, during recovery, hole injection from the IGBT region to the diode region can be inhibited. The reduced ratio of formation of the high-concentration P-type layer in the boundary region also reduces the amount of hole injection from the high-concentration P-type layer of the boundary region. Thus, it inhibits an increase in maximum reverse current during the recovery, and also decreases the carrier density on the cathode side to inhibit an increase in tail electrical current, so that the semiconductor device reduces switching loss and is highly resistant to recovery destruction.