The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Feb. 10, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Jens Peter Konrath, Villach, AT;
Ronny Kern, Finkenstein, AT;
Stefan Krivec, Arnoldstein, AT;
Ulrich Schmid, Vienna, AT;
Laura Stoeber, Vienna, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/47 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 21/04 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/475 (2013.01); H01L 21/02068 (2013.01); H01L 21/02592 (2013.01); H01L 21/28537 (2013.01); H01L 21/28581 (2013.01); H01L 21/302 (2013.01); H01L 21/3065 (2013.01); H01L 29/0619 (2013.01); H01L 29/161 (2013.01); H01L 29/1602 (2013.01); H01L 29/401 (2013.01); H01L 29/47 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 21/0495 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.