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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763328 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Oct. 04, 2018

Epitaxial semiconductor material grown with enhanced local isotropy

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Omur Isil Aydin, Dresden, DE;

Judson Holt, Ballston Lake, NY (US);

Lakshmanan Vanamurthy, Dresden, DE;

Tobias Heyne, Dresden, DE;

Pei-Yu Chou, Dresden, DE;

Cäcilia Brantz, Dresden, DE;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Thompson Hine LLP

Francois Pagette

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Lawrence C Tynes, Jr

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/0245 (2013.01); H01L 21/02499 (2013.01); H01L 21/02532 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/04 (2013.01); H01L 21/02579 (2013.01); H01L 21/26513 (2013.01); H01L 29/167 (2013.01);
Abstract

Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.

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Aydin, Omur. (2020). Epitaxial semiconductor material grown with enhanced local isotropy (U.S. Patent No. 10763328). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10763328

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