The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Jul. 08, 2016
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Susumu Hogyoku, Kanagawa, JP;

Shun Mitarai, Kanagawa, JP;

Shusaku Yanagawa, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/14 (2006.01); H01L 23/00 (2006.01); H04N 5/225 (2006.01); G02B 7/02 (2006.01); H04N 5/335 (2011.01); G02B 7/09 (2006.01); G03B 13/36 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14618 (2013.01); G02B 7/021 (2013.01); G02B 7/09 (2013.01); H01L 24/14 (2013.01); H01L 24/17 (2013.01); H01L 24/18 (2013.01); H01L 24/19 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 24/97 (2013.01); H01L 27/14 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14683 (2013.01); H04N 5/2254 (2013.01); H04N 5/2257 (2013.01); H04N 5/335 (2013.01); G03B 13/36 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/96 (2013.01); H01L 2224/131 (2013.01); H01L 2224/14135 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73259 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81951 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/92224 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/97 (2013.01); H01L 2924/15151 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15321 (2013.01); H01L 2924/16195 (2013.01);
Abstract

The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.


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