The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Jul. 24, 2017
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Seungjin Choi, Beijing, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1244 (2013.01); H01L 29/66765 (2013.01); H01L 29/78669 (2013.01); G02F 2001/136236 (2013.01); G02F 2202/103 (2013.01);
Abstract

A method for manufacturing the array substrate includes: forming a gate metal layer on a base by a first patterning process and forming a gate insulating layer on the gate metal layer; forming a semiconductor layer and a source/drain metal layer by a second patterning process on the resulted base, the source/drain metal layer including a data line and a metal electrode connected to the data line; forming a first electrode on the resulted base and forming a channel region by a third patterning process, the channel region causing the metal electrode to form a source electrode and a drain electrode; forming a passivation layer and an organic insulating layer by a fourth patterning process on the resulted base; the organic insulating layer at least corresponding to the data line; and forming a second electrode by a fifth patterning process on the resulted base.


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