The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Oct. 19, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jae-yup Chung, Yongin-si, KR;

Il-ryong Kim, Seongnam-si, KR;

Ju-youn Kim, Suwon-si, KR;

Jin-wook Kim, Hwaseong-si, KR;

Kyoung-hwan Yeo, Seoul, KR;

Yong-gi Jeong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.


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