The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Mar. 18, 2019
Applicant:

Fujifilm Electronic Materials U.s.a., Inc., N. Kingstown, RI (US);

Inventors:

Carl Ballesteros, San Tan Valley, AZ (US);

Abhudaya Mishra, Gilbert, AZ (US);

Eric Turner, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/3105 (2006.01); C09G 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31053 (2013.01); C09G 1/02 (2013.01);
Abstract

This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a Cto Chydrocarbon group and is separated by zero to ten alkylene oxide groups from the hydrophilic portion. The polishing composition has a pH of about 2 to about 6.5, and can have a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1 when polishing a patterned wafer comprising at least silicon nitride patterns overlayed with at least silicon oxide.


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