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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763110 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Feb. 08, 2019

Method and system for forming doped regions by diffusion gallium nitride materials

Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Ozgur Aktas, Pleasanton, CA (US);

Vladimir Odnoblyudov, Danville, CA (US);

Cem Basceri, Los Gatos, CA (US);

Assignee:

QROMIS, INC., Santa Clara, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Bradley Smith

Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01); H01L 29/861 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02428 (2013.01); H01L 21/02458 (2013.01); H01L 21/02642 (2013.01); H01L 21/22 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/66143 (2013.01); H01L 29/66212 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01);
Abstract

A method of forming doped regions by diffusion in gallium nitride materials includes providing a substrate structure including a gallium nitride layer and forming a mask on the gallium nitride layer. The mask exposes one or more portions of a top surface of the gallium nitride layer. The method also includes depositing a magnesium-containing gallium nitride layer on the one or more portions of the top surface of the gallium nitride layer and concurrently with depositing the magnesium-containing gallium nitride layer, forming one or more magnesium-doped regions in the gallium nitride layer by diffusing magnesium into the gallium nitride layer through the one or more portions. The magnesium-containing gallium nitride layer provides a source of magnesium dopants. The method further includes removing the magnesium-containing gallium nitride layer and removing the mask.

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