The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
May. 31, 2017
The Regents of the University of California, Oakland, CA (US);
Alan Young Liu, New Orleans, LA (US);
Justin Norman, Goleta, CA (US);
Arthur Gossard, Santa Barbara, CA (US);
John Bowers, Santa Barbara, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate () is disclosed. The structure of the active optical device includes an active region () having quantum dots () made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantum dot material in order to suppress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device. The active optical device is epitaxially grown on a handle substrate of an SOI substrate that has a surface waveguide formed in its device layer, where the active region and the surface waveguide are at the same height above the handle wafer surface.