The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2020
Filed:
Dec. 11, 2017
Applicants:
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Inventors:
Ji Woong Jang, Gyeonggi-do, KR;
Kang Ho Jeong, Gyeongsangnam-do, KR;
Ki Jong Lee, Gyeonggi-do, KR;
Sang Cheol Shin, Gyeonggi-do, KR;
Assignees:
Hyundai Motor Company, Seoul, KR;
Kia Motors Corporation, Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/01 (2006.01); G01K 15/00 (2006.01); H01L 23/34 (2006.01); H01L 27/16 (2006.01); H01L 49/02 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01); H01L 29/739 (2006.01); H01L 35/22 (2006.01);
U.S. Cl.
CPC ...
G01K 15/005 (2013.01); G01K 7/015 (2013.01); H01L 23/34 (2013.01); H01L 27/16 (2013.01); H01L 28/20 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); H01L 29/7393 (2013.01); H01L 35/22 (2013.01); H01L 2924/13055 (2013.01);
Abstract
An Insulated Gate Bipolar Transistor (IGBT) temperature sensor correction apparatus includes an Insulated Gate Bipolar Transistor (IGBT); a temperature sensor having a sensing diode; and a process variation sensor having an internal resistor.