The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Aug. 09, 2017
Applicants:

Adam Khan, San Francisco, CA (US);

Robert Polak, Lindenhurst, IL (US);

Inventors:

Adam Khan, San Francisco, CA (US);

Robert Polak, Lindenhurst, IL (US);

Assignee:

AKHAN Semiconductor, Inc., Gurnee, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/27 (2006.01); C03C 17/245 (2006.01); C03C 17/22 (2006.01);
U.S. Cl.
CPC ...
C23C 16/271 (2013.01); C03C 17/22 (2013.01); C03C 17/245 (2013.01); C23C 16/274 (2013.01); C03C 2217/28 (2013.01); C03C 2217/78 (2013.01); C03C 2218/153 (2013.01);
Abstract

Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, and a nanocrystalline diamond film on the silicon substrate, the diamond film deposited using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added. Further disclosed is a method of fabricating transparent glass that includes the steps of seeding an optical grade silicon substrate and forming a nanocrystalline diamond film on the silicon substrate using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added.


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