The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2020

Filed:

Sep. 29, 2017
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Christopher C. Painter, Dublin, CA (US);

Te Hsi Lee, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/125 (2006.01); G01P 15/08 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0086 (2013.01); B81B 3/0097 (2013.01); G01P 15/125 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/01 (2013.01); B81B 2203/0181 (2013.01); B81B 2203/04 (2013.01); G01P 2015/0831 (2013.01); G01P 2015/0837 (2013.01);
Abstract

A MEMS sensor is disclosed that includes dual pendulous proof masses comprised of sections of different thickness to allow simultaneous suppression of vertical and lateral thermal gradient-induced offsets in a MEMS sensor while still allowing for the normal operation of the accelerometer. In an embodiment, the structure and different sections of the MEMS sensor is realized using multiple polysilicon layers. In other embodiments, the structure and different thickness sections may be realized with other materials and processes. For example, plating, etching, or silicon-on-nothing (SON) processing.


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