The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Dec. 01, 2017
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Takashi Yamazaki, Shiojiri, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03B 5/04 (2006.01); H03B 5/32 (2006.01); H01L 41/16 (2006.01); H01L 41/09 (2006.01); H01L 41/083 (2006.01); H03H 9/24 (2006.01); H03H 9/05 (2006.01); H03H 3/007 (2006.01);
U.S. Cl.
CPC ...
H03B 5/04 (2013.01); H01L 41/083 (2013.01); H01L 41/09 (2013.01); H01L 41/16 (2013.01); H03B 5/32 (2013.01); H03H 3/0072 (2013.01); H03H 9/02448 (2013.01); H03H 9/0552 (2013.01); H03H 9/2489 (2013.01);
Abstract
A resonator includes a surface silicon layer as a base material, a first silicon oxide layer disposed on a first surface of the surface silicon layer, and a second silicon oxide layer disposed on the opposite side to the surface silicon layer of the first silicon oxide layer, wherein when the thickness of the surface silicon layer is represented by tsi, the thickness of the first silicon oxide layer is represented by ta, and the thickness of the second silicon oxide layer is represented by tb, the following relationships are satisfied: 0.138×tsi<ta<0.268×tsi and 0.189×tsi<tb<0.527×tsi.