The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Nov. 12, 2018
Applicant:

Ford Global Technologies, Llc, Dearborn, MI (US);

Inventors:

Zhuxian Xu, Novi, MI (US);

Chingchi Chen, Ann Arbor, MI (US);

Assignee:

FORD GLOBAL TECHNOLOGIES, LLC, Dearborn, MI (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/5387 (2007.01); H03K 17/16 (2006.01); H02M 1/084 (2006.01); H02M 1/00 (2006.01); H02P 27/08 (2006.01);
U.S. Cl.
CPC ...
H02M 7/53871 (2013.01); H02M 1/084 (2013.01); H03K 17/165 (2013.01); H02M 2001/0009 (2013.01); H02M 2001/0054 (2013.01); H02P 27/08 (2013.01);
Abstract

A multiphase inverter for an electric vehicle drive has a plurality of drivers to provide drive signals to respective gate loops of upper and lower transistors in the phase legs. A transformer has a secondary winding in a first gate loop of a first transistor in one phase leg and a primary winding connecting a Kelvin-emitter of the first transistor to a Kelvin-emitter of a second transistor in the other phase leg. Switching transients of transistors are shortened because when gate signal is toggled to change a conduction state of a transistor in a first phase leg, a rate of current change in the first leg is sensed in a transformer primary winding connected across a stray inductance of the first leg. A voltage proportional to the sensed rate is added to the gate signal via a transformer secondary winding, thereby increasing a common source inductance of the transistor.


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