The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Aug. 07, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Cheng-Wei Cheng, White Plains, NY (US);

Ning Li, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/026 (2006.01); G02B 6/12 (2006.01); G02B 6/122 (2006.01); G02B 6/13 (2006.01); G02B 6/42 (2006.01); G02B 6/136 (2006.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/021 (2013.01); G02B 6/12004 (2013.01); G02B 6/1228 (2013.01); G02B 6/131 (2013.01); G02B 6/136 (2013.01); G02B 6/42 (2013.01); H01S 5/026 (2013.01); H01S 5/343 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12078 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12176 (2013.01); H01S 5/04254 (2019.08); H01S 5/04257 (2019.08); H01S 2301/176 (2013.01);
Abstract

A semiconductor device including a substrate structure including a semiconductor material layer that is present directly on a buried dielectric layer in a first portion of the substrate structure and an isolation dielectric material that is present directly on the buried dielectric layer in a second portion of the substrate structure. The semiconductor device further includes a III-V optoelectronic device that is present in direct contact with the isolation dielectric material in a first region of the second portion of the substrate structure. A dielectric wave guide is present in direct contact with the isolation dielectric material in a second region of the second portion of the substrate structure.


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