The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Oct. 21, 2015
Japan Science and Technology Agency, Kawaguchi-shi, JP;
Yutaka Kazoe, Tokyo, JP;
Yuriy Pihosh, Tokyo, JP;
Kazuma Mawatari, Tokyo, JP;
Takehiko Kitamori, Tokyo, JP;
Kenji Kitamura, Ibaraki, JP;
Takahiro Nagata, Ibaraki, JP;
Osamu Tabata, Kyoto, JP;
Toshiyuki Tsuchiya, Kyoto, JP;
JAPAN SCIENCE AND TECHNOLOGY AGENCY, Kawaguchi-shi, JP;
Abstract
A first proton-donating layer () is a layer having a proton-donative functional group on the surface, for example, a silicon oxide layer. A second proton-donating layer () is also a layer having a proton-donative functional group on the surface, for example, a silicon oxide layer. Negative surface charges are formed on the main surface section of a first base () and the main surface section of a second base (), and these negative charges increased the proton conductivity in an aqueous solution fed to a nano channel. Although, in the aqueous solution, proton migration through hopping between water molecules contributes to its diffusion, the negative charges formed on the main surfaces of the bases () attract protons in the aqueous solution, and the conduction of protons is efficiently achieved in 'high-speed transfer regions' formed in the vicinity of the proton-donating layers ().