The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Jan. 23, 2019
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Bo Liang, Guangdong, CN;

Wei Wang, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); H01L 51/00 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0558 (2013.01); H01L 27/3274 (2013.01); H01L 51/0013 (2013.01); H01L 51/0045 (2013.01); H01L 51/0052 (2013.01);
Abstract

A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.


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