The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Dec. 12, 2017
The Penn State Research Foundation, University Park, PA (US);
Shujun Zhang, State College, PA (US);
Thomas R. Shrout, Furnace, PA (US);
Chuanying Shen, State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Abstract
A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a dpiezoelectric coefficient between 16.0-18.0 pC/N for all temperatures between 25 to 700° C., and a rotated dpiezoelectric coefficient of 8.0-9.5 pC/N with zero face shear/thickness shear piezoelectric coefficients d. dand din the same temperature range. The piezoelectric element can also have an electromechanical coupling factor kvariation of less than 7%, and dand rotated dpiezoelectric coefficient variations of less than 5% for temperatures between 25 to 700° C. The piezoelectric element can have high electrical resistivity, being on the order of >10Ω·cm at 600° C. The piezoelectric element can be an ABCOpiezoelectric material with a Fresnoite structure and A=Ca, Sr, Ba, Mg; B═Ti, Zr, Hf, V; and C═Si, Ge, Sn.