The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Nov. 08, 2019
Applicant:
Nichia Corporation, Anan-shi, Tokushima, JP;
Inventors:
Naoto Inoue, Anan, JP;
Sho Kusaka, Tokushima, JP;
Assignee:
NICHIA CORPORATION, Anan-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); B23K 26/53 (2014.01); B23K 26/00 (2014.01); H01L 21/78 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/005 (2013.01); B23K 26/0006 (2013.01); B23K 26/53 (2015.10); H01L 21/78 (2013.01); B23K 2103/56 (2018.08); H01L 2933/0033 (2013.01);
Abstract
A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.