The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Mar. 21, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tze-Chiang Chen, Yorktown Heights, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); H01L 31/20 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/202 (2013.01); H01L 31/02167 (2013.01); H01L 31/022441 (2013.01); H01L 31/0747 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.


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