The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Sep. 20, 2016
Applicant:

Nanjing Tech University, Nanjing, CN;

Inventors:

Zisheng Guan, Nanjing, CN;

Jun Li, Nanjing, CN;

Zhimei Shen, Nanjing, CN;

Chunhua Lu, Nanjing, CN;

Zhongzi Xu, Nanjing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/18 (2006.01); C30B 33/10 (2006.01); C30B 29/06 (2006.01); H01L 21/306 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); C30B 29/06 (2013.01); C30B 33/10 (2013.01); H01L 21/30604 (2013.01); H01L 31/0236 (2013.01); H01L 31/18 (2013.01); H01L 31/182 (2013.01); H01L 33/10 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

It discloses a texturing method for a diamond wire cut polycrystalline silicon slice, including the following steps: firstly, immersing the diamond wire cut polycrystalline silicon slice into a mixed aqueous solution of an alkali solution and an alkali reaction control agent, removing a damaged layer on a surface of the silicon slice, and then immersing the silicon slice into a hydrofluoric acid solution containing inorganic ions and organic molecules for reaction; secondly, pretreating the polycrystalline silicon surface by a mixed solution of hydrofluoric acid and hydrogen peroxide, adding a pore-forming regulator at the same time, and finally texturing the surface of the silicon slice by a mixed acid solution of hydrofluoric acid and nitric acid.


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