The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Feb. 10, 2017
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Tetsuro Hayashida, Tokyo, JP;

Takuma Nanjo, Tokyo, JP;

Tatsuro Watahiki, Tokyo, JP;

Akihiko Furukawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/407 (2013.01); H01L 29/66136 (2013.01); H01L 29/66212 (2013.01); H01L 29/8613 (2013.01); H01L 29/8725 (2013.01);
Abstract

A substrate is made of gallium-nitride-based material. The n-type layer is disposed on a first surface of the substrate. A p-type layer is disposed on the n-type layer, and constitutes, along with the n-type layer, a semiconductor layer on the first surface of the substrate, the semiconductor layer being provided with a mesa shape having a bottom surface, a side surface, and a top surface. An anode electrode is disposed on the p-type layer. A cathode electrode is disposed on a second surface of the substrate. An insulating film continuously extends over the bottom surface and the top surface to cover the side surface. The top surface is provided with at least one trench. The at least one trench includes a trench filled with the insulating film.


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