The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Feb. 12, 2019
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Teruhisa Ikuta, Toyama, JP;

Hiroshi Sakurai, Toyama, JP;

Satoru Kanai, Toyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 29/78615 (2013.01); H01L 29/78624 (2013.01);
Abstract

A semiconductor device having a silicon-on-insulator (SOI) structure in which a source region and a drain region extend along a longitudinal direction that is a direction along a longer side of sides facing each other, and are disposed side-by-side in a lateral direction that is a direction perpendicular to the longitudinal direction. In a plan view, a body region extends along the longitudinal direction and is surrounded by a drift region and an insulating region. A space between the insulating region and the body region in the lateral direction becomes narrower from the center to the end of the body region in the longitudinal direction. This achieves high breakdown voltage in the semiconductor device.


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