The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Feb. 02, 2017
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Toru Hiyoshi, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide semiconductor device includes: a silicon carbide substrate; a first silicon carbide layer disposed on the silicon carbide substrate; a second silicon carbide layer disposed on the first silicon carbide layer; a third silicon carbide layer disposed on the second silicon carbide layer; a fourth silicon carbide layer disposed on the third silicon carbide layer; and a first impurity region formed to extend through the second silicon carbide layer, the third silicon carbide layer and the fourth silicon carbide layer. A trench is formed in the silicon carbide semiconductor device. The silicon carbide semiconductor device includes: a gate insulating film in contact with a wall of the trench; a gate electrode; a second impurity region disposed below the trench; a third impurity region formed below the first impurity region; and a fourth impurity region formed between the second impurity region and the third impurity region.