The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Nov. 28, 2014
Applicant:

Nissan Motor Co., Ltd., Yokohama-shi, Kanagawa-ken, JP;

Inventor:

Satoshi Tanimoto, Kanagawa, JP;

Assignee:

NISSAN MOTOR CO., LTD., Yokohama-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 25/18 (2006.01); H01L 23/48 (2006.01); H02M 7/48 (2007.01); H01L 25/07 (2006.01); H01L 23/00 (2006.01); H02M 3/155 (2006.01); H02M 7/04 (2006.01); H01L 23/498 (2006.01); H02M 7/00 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0655 (2013.01); H01L 23/48 (2013.01); H01L 23/49838 (2013.01); H01L 23/49844 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 25/072 (2013.01); H01L 25/18 (2013.01); H02M 3/155 (2013.01); H02M 7/003 (2013.01); H02M 7/04 (2013.01); H02M 7/48 (2013.01); H03K 17/567 (2013.01); H01L 23/49811 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/4809 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/49431 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19105 (2013.01);
Abstract

A half-bridge power semiconductor module includes an insulating wiring board including a positive-electrode wiring conductor, a bridge wiring conductor, and a negative-electrode wiring conductor arranged on or above a single insulating plate in such a way as to be electrically insulated from each other. The back-surface electrodes of a high-side power semiconductor device and a low-side power semiconductor device are joined to the front sides of the positive-electrode wiring conductor and the bridge wiring conductor. Front-surface electrodes of the high-side power semiconductor device and the low-side power semiconductor device are connected to the bridge wiring conductor and the negative-electrode wiring conductor by a plurality of bonding wires and a plurality of bonding wires.


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