The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Dec. 08, 2018
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Jerod F. Mason, Bedford, MA (US);
David Scott Whitefield, Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 21/3063 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/02164 (2013.01); H01L 21/3063 (2013.01); H01L 21/31055 (2013.01); H01L 21/76 (2013.01); H01L 21/7624 (2013.01); H01L 21/7685 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/78603 (2013.01);
Abstract
A method for fabricating a radio-frequency device involves providing a substrate structure including a silicon handle wafer, an oxide layer formed on the silicon handle wafer, and an active silicon layer disposed on the oxide layer. The method further involves patterning and etching the active silicon layer and the oxide layer to form a frontside opening in the active silicon layer and the oxide layer exposing a top surface of the silicon handle wafer and converting the exposed top surface of the silicon handle wafer to porous silicon