logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10755920 B1

PDFFull Text
Date of Patent:
Aug. 25, 2020

Filed:

Jul. 27, 2016

Method for manufacturing semiconductor device and semiconductor manufacturing apparatus used for the method

Applicants:

Osaka University, Suita-shi, Osaka, JP;

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Heiji Watanabe, Suita, JP;

Takayoshi Shimura, Suita, JP;

Takuji Hosoi, Suita, JP;

Mitsuru Sometani, Tsukuba, JP;

Assignees:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

OSAKA UNIVERSITY, Osaka, JP;

Attorney:
Primary Examiner:

Michael P Wieczorek

Assistant Examiner:

Michael G Miller

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 8/80 (2006.01); C23C 8/10 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 8/10 (2013.01); C23C 8/80 (2013.01); C23C 16/455 (2013.01); C23C 16/458 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/049 (2013.01); H01L 28/00 (2013.01); H01L 29/66068 (2013.01); H01L 29/1608 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes: thermally-oxidizing a surface of a to-be-processed base made by SiC as body material to form a silicon dioxide film, by supplying gas containing oxidation agent to the surface of the to-be-processed base; exchanging ambient gas containing the oxidation agent after forming the silicon dioxide film, by decreasing a partial pressure of the oxidation agent in the ambient gas to 10 Pa or less; and after exchanging the ambient gas, lowering a temperature of the to-be-processed base.

Find Patent Forward Citations

Loading…