The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Sep. 28, 2018
Applicant:
Tdk Corporation, Minato-ku, Tokyo, JP;
Inventors:
Masahiro Hiraoka, Tokyo, JP;
Hitoshi Saita, Tokyo, JP;
Suguru Andoh, Tokyo, JP;
Atsuo Matsutani, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/01 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H01G 4/005 (2006.01); H01G 7/06 (2006.01);
U.S. Cl.
CPC ...
H01G 4/01 (2013.01); H01G 4/005 (2013.01); H01G 4/1227 (2013.01); H01G 4/33 (2013.01); H01G 4/1245 (2013.01); H01G 7/06 (2013.01);
Abstract
Provided is a thin film capacitor that includes: a first electrode layer having a principal surface in which a plurality of recesses are provided; a dielectric layer laminated on the principal surface of the first electrode layer; and a second electrode layer laminated on the dielectric layer. When a depth of the recess is defined as FL and a thickness of the dielectric layer is defined as T, H/T is 0.05 or more and 0.5 or less.