The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Mar. 26, 2019
Applicant:

Lapis Semiconductor Co., Ltd., Yokohama, JP;

Inventor:

Junya Ogawa, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G11C 5/14 (2006.01); G05F 1/565 (2006.01); G01R 31/67 (2020.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G01R 31/67 (2020.01); G05F 1/565 (2013.01); G11C 5/147 (2013.01); G11C 29/50012 (2013.01); G11C 2029/5004 (2013.01);
Abstract

Provided is a semiconductor device including a regulator that generates a first voltage and applying the first voltage to a first line; an external terminal that is connected to the first line and externally connects an external component; and a test circuit that inspects a connection state of the external component. The test circuit includes a test discharge execution unit that is configured, upon receiving a test start signal, to stop the operation of the regulator and discharge the external component by connecting the first line to a predetermined potential; and a discharge duration measurement unit that measures a time required from the reception of the test start signal to a drop of the voltage of the first line below a predetermined second voltage, as a discharge duration of the component, and generate discharge duration information about the discharge duration.


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