The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Aug. 21, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventor:
Shin-Ho Choi, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/44 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/14 (2006.01); G11C 29/04 (2006.01); G11C 11/56 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01); G11C 29/24 (2006.01); G11C 29/38 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/28 (2013.01); G11C 16/3427 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 29/04 (2013.01); G11C 29/24 (2013.01); G11C 29/50004 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 29/38 (2013.01); G11C 2029/0409 (2013.01); G11C 2211/5621 (2013.01);
Abstract
A storage device includes a controller and a nonvolatile memory device having memory cells and reference memory cells. The controller accesses first memory cells of the memory cells, reads first reference memory cells, which are associated with the first memory cells, from among the reference memory cells when the access to the first memory cells fails, determines a bad area depending on a read result of the first reference memory cells, and identifies second memory cells, which belong to the bad area, from among the memory cells to bad memory cells.