The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Mar. 04, 2019
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Yoshihiko Kamata, Yokohama, JP;
Takuyo Kodama, Sagamihara, JP;
Yuki Ishizaki, Yokohama, JP;
Yoko Deguchi, Yokohama, JP;
Assignee:
Toshiba Memory Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 2211/5621 (2013.01);
Abstract
According to an embodiment, a semiconductor storage device includes a first memory cell and a control circuit. The first memory cell is configured to store first data. The control circuit is configured to apply a first voltage to a source of the first memory cell in a read operation of the first data in the first memory cell, and to apply a second voltage to the source of the first memory cell in a verify operation of the first data in the first memory cell. The second voltage is lower than the first voltage.