The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Mar. 08, 2019
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Selina La Barbera, Grenoble, FR;
Niccolo Castellani, Grenoble, FR;
Gabriele Navarro, Grenoble, FR;
Elisa Vianello, Grenoble, FR;
Abstract
A method for programming a phase change memory cell placed in an initial crystalline state, the memory cell being called of taking a plurality of resistance values belonging to a range of values called 'programming window', the method including parameterizing a lower limit of the programming window by applying to the memory cell a single gradual writing voltage pulse or a first series of identical gradual writing voltage pulses; progressively adjusting the resistance value of the memory cell by the following operations: a gradual erasing operation during which a series of identical gradual erasing voltage pulses is applied to the memory cell; a gradual writing operation during which a second series of identical gradual writing voltage pulses is applied to the memory cell; the gradual writing and gradual erasing voltage pulses have a width less than 50 ns.