The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Sep. 11, 2017
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Jiayi Jin, Saratoga, CA (US);

Paolo Sacchetto, Cupertino, CA (US);

Maofeng Yang, San Jose, CA (US);

Weijun Yao, Saratoga, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3258 (2016.01); G09G 3/20 (2006.01); G09G 3/3233 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3258 (2013.01); G09G 3/2007 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0251 (2013.01); G09G 2310/0262 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0247 (2013.01); G09G 2320/043 (2013.01); G09G 2330/02 (2013.01);
Abstract

Electronic devices, storage medium containing instructions, and methods pertain to determining a target boosted threshold voltage level based at least in part on a target emission threshold voltage level. Using the determined target boosted threshold voltage level, a light emitting diode (LED)-controlling transistor is submitted to voltage stress to boost a threshold voltage of the transistor to the target boosted threshold voltage level during a first portion of a refresh period between first and second emission periods. During a second portion of the refresh period, the voltage stress is de-asserted to settle the threshold voltage to a target emission threshold voltage level for the second emission period. After the voltage is settled, the LED-controlling transistor is driven based at least in part on the target emission threshold voltage level.


Find Patent Forward Citations

Jin, Jiayi. (2020). Threshold voltage hysteresis compensation (U.S. Patent No. 10755640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10755640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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