The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Oct. 30, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yeon-kyu Choi, Seoul, KR;
Ki-seok Oh, Seoul, KR;
Seung-jun Shin, Incheon, KR;
Hye-ran Kim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 11/4074 (2006.01); G11C 11/406 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0634 (2013.01); G06F 3/0604 (2013.01); G06F 3/0625 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 11/4074 (2013.01); G11C 11/40615 (2013.01); G11C 2211/4067 (2013.01);
Abstract
A method and memory device of controlling a plurality of low power states are provided. The method includes: entering a low power mode state, in which memory cell rows of the memory device are refreshed and power consumption is lower than in a self-refresh mode state, in response to a low power state entry command; and exiting the low power mode state based on a low power mode exit latency time that is set in a mode register of the memory device or at least one of an alarm signal and a low power mode exit command.