The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Apr. 24, 2018
Applicant:

Microchip Technology Incorporated, Chandler, AZ (US);

Inventors:

Greg Dix, Tempe, AZ (US);

Philippe Deval, Lutry, CH;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/10 (2006.01); G01R 19/00 (2006.01); G05F 3/26 (2006.01); H03K 17/687 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
G01R 19/10 (2013.01); G01R 19/0092 (2013.01); G05F 3/262 (2013.01); H01L 29/7815 (2013.01); H03K 17/6871 (2013.01); H03K 2217/0027 (2013.01);
Abstract

An integrated circuit device for controlling and sensing electrical current is provided. The integrated circuit device comprises a main transistor device, configured for controlling a main current, and a plurality of sensing transistor devices, configured for controlling a combined sensing current. The main transistor device and the plurality of sensing transistor devices are connected to a common gate node. The on-state resistance of the main transistor device is lower than a combined on-state resistance of the plurality of sensing transistor devices. The sensing transistor devices are distributed throughout at least a section of the integrated circuit to reduce an influence of at least one local property of the integrated circuit device on the combined sensing current.


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