The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Nov. 19, 2018
Kojundo Chemical Laboratory Co., Ltd., Sakado-shi, Saitama, JP;
Fumikazu Mizutani, Sakado, JP;
Shintaro Higashi, Sakado, JP;
KOJUNDO CHEMICAL LABORATORY CO., LTD., Sakado-Shi, Saitama, JP;
Abstract
Provided is a method for depositing a gallium-containing thin film by atomic layer deposition (ALD) without using radical species such as plasma and ozone using a gallium-containing precursor having a high vapor pressure even at low temperature and high thermal stability. Gallium (I) having a cyclopentadienyl ligand as illustrated below has a sufficiently high thermal decomposition temperature, a sufficiently high vapor pressure at a low temperature, and high reactivity, and as a result, is suitable for low temperature ALD. An atomic layer deposition method of a metal-containing thin film using a precursor represented by the following general formula (1) (In general formula (1), Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms).