The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Jul. 24, 2017
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Yoko Iizumi, Ibaraki, JP;
Toshiya Okazaki, Ibaraki, JP;
Hajime Sakakita, Ibaraki, JP;
Jaeho Kim, Ibaraki, JP;
Abstract
Exemplary Embodiments of the invention address the problem of providing semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV, and a method for manufacturing the same. In one embodiment of the invention, by applying a method for directly irradiating semiconductor single-layer carbon nanotubes with ultraviolet light in atmospheric air, ozone is generated in the atmosphere, a gram amount of oxygen atoms is introduced to the semiconductor single-layer carbon nanotubes, and semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile