The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2020
Filed:
Nov. 16, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Kouji Nakajima, Tokyo, JP;
Yoshiaki Tanaka, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/18 (2006.01); H03K 17/082 (2006.01); H02J 7/00 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H03K 17/687 (2006.01); H02H 5/04 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H01L 27/0266 (2013.01); H01L 29/7815 (2013.01); H02J 7/0029 (2013.01); H03K 17/6874 (2013.01); H01L 27/02 (2013.01); H02H 5/04 (2013.01); H02J 7/007 (2013.01); H02J 7/0031 (2013.01); H02J 7/00304 (2020.01); H03K 2217/0027 (2013.01); H03K 2217/0054 (2013.01);
Abstract
A semiconductor device includes a first main MOS transistor and a second main MOS transistor of a vertical structure that are inversely coupled to each other in series by sharing a drain electrode and a first sense MOS transistor and a second sense MOS transistor of a vertical structure that are inversely coupled to each other in series by sharing a drain electrode. The first sense MOS transistor is used for detecting the main current of the first main MOS transistor, and the second sense MOS transistor is used for detecting the main current of the second main MOS transistor.