The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Mar. 23, 2018
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventor:

Masaharu Fukakusa, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); F21V 9/30 (2018.01); H01S 5/022 (2006.01); H01L 33/50 (2010.01); F21V 5/04 (2006.01); G02B 3/08 (2006.01); F21S 2/00 (2016.01); F21K 9/64 (2016.01); G02B 26/08 (2006.01); G03B 21/20 (2006.01); H01L 33/58 (2010.01); F21S 41/176 (2018.01); F21V 13/08 (2006.01); F21V 7/04 (2006.01); F21V 13/14 (2006.01); F21S 43/16 (2018.01); F21V 13/12 (2006.01); F21V 7/00 (2006.01); F21V 7/09 (2006.01); F21V 9/32 (2018.01); F21V 9/35 (2018.01); F21Y 115/30 (2016.01);
U.S. Cl.
CPC ...
H01S 5/005 (2013.01); F21K 9/64 (2016.08); F21S 2/00 (2013.01); F21V 5/04 (2013.01); F21V 9/30 (2018.02); G02B 3/08 (2013.01); G02B 26/0816 (2013.01); G03B 21/2013 (2013.01); G03B 21/2033 (2013.01); H01L 33/50 (2013.01); H01S 5/00 (2013.01); H01S 5/022 (2013.01); F21S 41/176 (2018.01); F21S 43/16 (2018.01); F21V 5/045 (2013.01); F21V 7/0091 (2013.01); F21V 7/048 (2013.01); F21V 7/09 (2013.01); F21V 9/32 (2018.02); F21V 9/35 (2018.02); F21V 13/08 (2013.01); F21V 13/12 (2013.01); F21V 13/14 (2013.01); F21Y 2115/30 (2016.08); H01L 33/58 (2013.01);
Abstract

A light source device includes: a semiconductor light emitting element (laser element); an optical element that has a plurality of lens regions which are a plurality of divided regions, and that changes an intensity distribution of a light beam emitted from the semiconductor light emitting element, by the plurality of lens regions; and a phosphor element that emits light having, as excitation light, the light which has had the intensity distribution changed by the optical element. The phosphor element is disposed so that a light emitting surface of the phosphor element is inclined with respect to a plane having an optical axis of the excitation light as a normal line, the plurality of lens regions have respective first focal points different from each other, and light beams incident on the plurality of lens regions and focused on the first focal points overlap on the light emitting surface of the phosphor element.


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